| PART |
Description |
Maker |
| W83194R-37/-58 W83194R-58 |
100MHz/133MHz VIA MVP3, VIA Apollo Pro Clock Gen., 3-DIMM, with S.S.T.
100 MHZ AGP CLOCK FOR VIA CHIPSET
|
Winbond Electronics
|
| NB3W1200L |
3.3V 100MHz - 133MHz Differential 1:12 HCSL or Push-Pull Clock ZDB - Fanout Buffer
|
ON Semiconductor
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| R1005300L |
Si Reverse, low current, 5 - 100MHz, 30.8dB typ. Gain @ 100MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| HA3-2625-5 HA9P2625-5 HA9P2625-9 HA-2620 HA-2625 H |
From old datasheet system
100MHz High Input Impedance Very Wideband Uncompensated Operational Amplifiers
100MHz/ High Input Impedance/ Very Wideband/ Uncompensated Operational Amplifiers
INDUCTOR PWR TOROID 2.5UH SMD
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers OP-AMP, 7000 uV OFFSET-MAX, 100 MHz BAND WIDTH, PDSO8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| PCK2020DL PCK2020 PCK2020_2 |
CK00 100/133MHz spread spectrum differential system clock generator
CK00 (100/133MHz) spread spectrum
From old datasheet system
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| HYB39L128160AC-7.5 HYB39L128160AT-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
|
Infineon
|
| K4S560832D-NCL7C |
8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
| K4S281632E-TC7C K4S281632E-TL7C |
2M x 16bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
| ICS9250-09 |
CK820 Single Chip Clock, Supports 100 - 133MHz
|
ICS
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