PART |
Description |
Maker |
MB8504E036AA-60 |
4 M×36 BITS
Hyper Page Mode DRAM Module(CMOS 4 M×36位快速页面存取模式动态RAM模块)
|
Fujitsu Limited
|
HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns 1M x 4 Bit EDO DRAM 3.3 V 60 ns -1M x 4-Bit Dynamic RAM 1M x 4 Bit EDO DRAM 3.3 V 70 ns 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位(16777216 - Word位)动态随机存储器 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM4 |
1M x 40 Bit Dynamic Random Access Memory Module 1M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 40 FAST PAGE DRAM MODULE, 100 ns, SMA72
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组 x8 Page Mode DRAM Module x8页面模式内存模块 x8 Static Column Mode DRAM Module x8静态列模式DRAM模块 x8 DRAM ModuleUndefined Architecture x8内存,未定义建筑
|
Analog Devices, Inc. TOKO, Inc. Altera, Corp.
|
KM416C1200CT-L5 KM416V1200CT-L5 KM416C1000CJ-L5 |
1M X 16 FAST PAGE DRAM, 50 ns, PDSO44 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
|
|
HM538253B HM538253BTT-10 HM538254BTT-10 HM538253BJ |
2 M VRAM (256-kword x 8-bit) Hyper Page Mode (HM538254B) 2 M VRAM (256-kword x 8-bit) Hyper Page Mode (HM538254B)
|
Elpida Memory
|
AS4C4M4F0-50JC AS4C4M4F0-50JI AS4C4M4F0-50TC AS4C4 |
x4 Fast Page Mode DRAM 5V 4M x 4 CMOS DRAM (Fast Page mode) 5V米4的CMOS的DRAM(快速页模式
|
Alliance Semiconductor, Corp.
|
GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C |
1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Electronic Theatre Controls, Inc. Rochester Electronics, LLC Integrated Silicon Solution, Inc.
|