| PART |
Description |
Maker |
| DF5A82FU EA08963 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| DF5A6.8FU |
Diodes for Protecting Against ESD
|
TOSHIBA
|
| DF3A6.8LFE |
Diodes for Protecting Against ESD
|
TOSHIBA[Toshiba Semiconductor]
|
| DF3A6.8FE |
DIODE ZENER SINGLE 500mW 3Vz 5mA-Izt 0.05 10uA-Ir 1 PowerDI-323 3K/REEL
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
|
Toshiba Corporation
Toshiba Semiconductor
|
| FLF-40 FLM-80 FLM-60 FLM-100 FLM-120 FLM-30 |
Protecting Wiring Harnesses
|
Cooper Bussmann, Inc.
|
| DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD Epitaxial Planar Type
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.3F |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 19.52 to 20.39; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| MAZT062H MAZT082H MAZT120H MAZT068H MAZT100H |
Small-signal device - Diodes - Zener Diodes
ESD Diodes Silicon planar type
|
PANASONIC[Panasonic Semiconductor]
|
| MA6X126 |
Small-signal device - Diodes - Swicthing Diodes
From old datasheet system
Switching Diodes
|
Matsshita / Panasonic
|
| MA2C185 MA185 |
Small-signal device - Diodes - Swicthing Diodes
From old datasheet system
DO-34-A1
Switching Diodes
|
Matsshita / Panasonic
|
