| PART |
Description |
Maker |
| CRF03 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 1.6 to 1.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV
|
Toshiba Corporation
|
| W53SF4BT |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 15.3 to 15.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Kingbright Corporation.
|
| ISL9V5036S3ST |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.3 to 5.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Fairchild Semiconductor Corporation
|
| TA1310ANG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86C420FG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP86PS27FG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 6.6 to 6.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86CP27AFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.9 to 2.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86FS49BUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 3.5 to 3.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
