PART |
Description |
Maker |
CY7C1041BNV33 CY7C1041BNV33L-12ZXC CY7C1041BNV33L- |
256 K x 16 Static RAM Low CMOS standby power 1.8 mW (max.)
|
Cypress Semiconductor
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IDT7MP4145 IDT7MB4145S15Z IDT7MB4145S15M IDT7MB414 |
256K x 32 CMOS STATIC RAM MODULE 256K × 32的CMOS静态RAM模块 IC LOGIC 244TQ OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS -40 85C QSOP-20 55/TUBE 256 x 32 CMOS static RAM module
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Integrated Device Technology, Inc. IDT[Integrated Device Technology] Integrated Device Techn...
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CY7C197BN-25PC CY7C197BN-15VC |
256-Kb (256 K x 1) Static RAM Fast access time: 15 ns 256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24 256 Kb (256K x 1) Static RAM 256K X 1 STANDARD SRAM, 25 ns, PDIP24
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Cypress Semiconductor, Corp.
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CAT22C10 22C10 CAT22C10P-30TE13 CAT22C10J-20TE13 C |
256-Bit Nonvolatile CMOS Static RAM 256-Bit Nonvolatile CMOS Static RAM 256位非易失性的CMOS静态RAM 256-BitNonvolatileCMOSStaticRAM
|
CatalystSemiconductor CATALYST[Catalyst Semiconductor]
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IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
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Integrated Circuit Solu... Fuji Electric Holdings Co., Ltd. ICSI[Integrated Circuit Solution Inc]
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CY7C192-15VXC |
64K x 4 Static RAM with Separate IO; Density: 256 Kb; Organization: 64Kb x 4; Vcc (V): 4.5 to 5.5 V; 64K X 4 STANDARD SRAM, 15 ns, PDSO28 64 K × 4 Static RAM with Separate IO CMOS for optimum speed/power
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Cypress Semiconductor, Corp.
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IS62LV2568LL IS62LV2568L 25_62LV2568L-LL IS62LV256 |
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM From old datasheet system ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
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IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
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P4C422-10PC P4C422-10PM P4C422-15PC P4C422-15PM P4 |
HIGH SPEED 256 x 4 STATIC CMOS RAM
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Pyramid Semiconductor C... Pyramid Semiconductor Corporation
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AM42DL1614DT45IT AM42DL1614DB45IT AM42DL1614DB35IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位2米8 1个M x 16位).0伏的CMOS只,同时作业闪存兆位256亩16位),静态存储器 Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位米8 1个M x 16位).0伏的CMOS只,同时作业闪存兆位56亩16位),静态存储器 Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM From old datasheet system ASYNCHRONOUS STATIC RAM
|
ICSI
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