| PART |
Description |
Maker |
| W2H11A2218AT W3H15C1038AT W2H15C1038AT W2H11A1018A |
High Current Feedthru Capacitors
|
AVX Corporation
|
| AM29LV400B-100WAC AM29LV400B-100WACB AM29LV400B-10 |
PTSE 6C 6#20 SKT RECP
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Metal; Series:MS C-26482 Series I; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
CAP 0.47UF 50V 50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
PTSE 3C 3#20 PIN RECP
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 150 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| SGH30N60RUF SGH30N60RUFTU |
Discrete, Short Circuit Rated IGBT
Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| RFP-20-50TPP-S |
0 MHz - 2000 MHz 50 ohm RF/MICROWAVE TERMINATION ROHS COMPLIANT, CERAMIC PACKAGE-1
Flangeless Termination 20 Watts, 50
|
Anaren, Inc.
Anaren Microwave
|
| RFP-150-50TCGN-S |
0 MHz - 3000 MHz 50 ohm RF/MICROWAVE TERMINATION ROHS COMPLIANT PACKAGE-1
Flangeless Termination 150 Watts, 50W
|
Anaren, Inc.
Anaren Microwave
|
| RFP-60-50TPR-S |
0 MHz - 6000 MHz RF/MICROWAVE TERMINATION ROHS COMPLIANT PACKAGE-1
Flanged Termination 60 Watts, 50Ohms
|
Anaren, Inc.
Anaren Microwave
|
| CHF2010CNP500LX CHF2010CNP500LXE CHF2010CNP500LZE |
10 W Power RF Chip Termination 0 MHz - 2000 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Bourns Inc.
Bourns, Inc.
|
| 74LVT162244B 74LVT162244BDGG 74LVT162244BDL 74LVT1 |
3.3V 16-bit buffer/driver with 30 termination resistors
3.3 V 16-bit buffer-driver with 30 Ohm termination resistors
12-Bit Asynchronous Binary Counters 16-TSSOP -40 to 85
From old datasheet system
3.3V 16-bit buffer/driver with 30ohm termination resistors
3.3 V 16-bit buffer/driver with 30 Ohm termination resistors
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PAC1284-03QR PAC1284-04QR PAC1284-06QR PAC1284-01Q |
P/ACTIVE IEEE 1284 ECP/EPP TERMINATION NETWORK
APPLICATION SPECIFIC DIODE ARRAY|SO 特定应用二极管阵列|
P/ACTIVE IEEE 1284 ECP/EPP TERMINATION NETWORK P /有源符合IEEE 1284支持ECP / EPP终端网络
PActive™ IEEE 1284 ECP/EPP Termination Network, ±4kV HBM ESD
|
California Micro Device...
Maxim Integrated Products, Inc.
California Micro Devices Corporation
|
| 2004-6115-00 2004-6116-00 2004-6112-00 2004-6111-0 |
SMA Terminations 形状记忆合金负载
0 MHz - 26500 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Amphenol, Corp.
PHOENIX CONTACT Deutschland GmbH
|
