| PART |
Description |
Maker |
| HT23C010 23C010 |
From old datasheet system
CMOS 128K x 8-Bit Mask ROM(CMOS 128K x 8位掩模式ROM) 的CMOS 128K的8位掩模ROM28K的的CMOS × 8位掩模式光盘
CMOS 128K 8-Bit Mask ROM
CMOS 128K? 8-Bit Mask ROM
CMOS 128K′ 8-Bit Mask ROM
|
Holtek Semiconductor, Inc.
HOLTEK[Holtek Semiconductor Inc]
|
| MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32
x8 Flash EEPROM x8闪存EEPROM
|
Macronix International Co., Ltd.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| CAT24WC129 CAT24WC129KA-1.8TE13 CAT24WC129KA-TE13 |
128K-Bit I2C Serial CMOS E2PROM
1.8V-6.0V 128K-bit IIC serial CMOS EEPROM
2.5V-6.0V 128K-bit IIC serial CMOS EEPROM
3.0V-5.5V 128K-bit IIC serial CMOS EEPROM
|
CATALYST[Catalyst Semiconductor]
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| AS7C31025B AS7C31025B-20TJIN AS7C31025B-10JC AS7C3 |
SRAM - 3.3V Fast Asynchronous
128 x 64 pixel format, LED or EL Backlight available
8-Bit Parallel-Load Shift Registers 16-TVSOP -40 to 85
8-Bit Parallel-Load Shift Registers 16-SSOP -40 to 85
8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85
3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| UPD441000L-X UPD441000LGU-B10X-9JH UPD441000LGU-B8 |
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
NEC[NEC]
|
| UPD431008LLE-A17 UPD431008LLE-A20 |
x8 SRAM
1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT 1m-bit互补128k-word8位快速静态存储器
|
NEC TOKIN, Corp.
|
| TC531001 TC531001CF-12 TC531001CF-15 TC531001CP-12 |
1M BIT (128K WORD x 8 BIT) CMOS MASK ROM
|
Toshiba Semiconductor
|
| M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
