PART |
Description |
Maker |
APT10045JFLL |
POWER MOS 7 1000V 21A 0.450 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT10045B2LL APT10045LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
APT6045CVR APT5024BVFR |
POWER MOS V 600V 11.8A 0.450 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10086SVR |
POWER MOS V 1000V 13A 0.860 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
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APT10090BLL APT10090SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 12A 0.900 Ohm
|
Advanced Power Technology Ltd.
|
APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
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APT10025JVFR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm
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Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT12045L2VR |
POWER MOS V 1200V 26A 0.450 Ohm
|
Advanced Power Technology
|
APT1004 APT1004RCN |
POWER MOS IV 1000V 3.6A 4.00 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT1004RGN |
POWER MOS IV 1000V 3.3A 4.00 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
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