PART |
Description |
Maker |
APT5014B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT4014BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 400V 28A 0.140 Ohm
|
Advanced Power Technology Ltd.
|
APT4014HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 400V 28A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
APT5017BVR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT8014L2FLL |
POWER MOS 7 800V 52A 0.140 Ohm
|
Advanced Power Technology
|
RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|