| PART |
Description |
Maker |
| TIM5964-8UL |
HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM3742-16UL |
HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM6472-8UL09 |
HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM7785-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM3742-12UL09 |
HIGH POWER P1dB=41.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| TIM6472-16UL |
HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| AWT6106 AWT6106M5P8 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
From old datasheet system
Power Amplifiers
|
ANADIGICS, Inc
|
| AWT6136M5P8 AWT6136RM5P8 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc.
ANADIGICS INC
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
