| PART |
Description |
Maker |
| CXK5V16100TM-10LLX CXK5V16100TM-85LLX |
65536-word x 16-bit High Speed CMOS Static RAM
65536-word X 16-bit High Speed CMOS Static RAM
|
SONY
|
| HM62864 |
65536-word 8-bit High Speed CMOS Static RAM
65536-word 8-bit High Speed CMOS Static RAM
65536-word ? 8-bit High Speed CMOS Static RAM
|
Electronic Theatre Controls, Inc.
ETC
|
| CXK5T8512TM CXK5T8512TM-10LLX CXK5T8512TM-12LLX CX |
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
Sony, Corp.
SONY[Sony Corporation]
|
| HN27C1024HCC |
65536-word x 16-bit CMOS UV Erasable and Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| CXK5B81020J CXK5B81020J-12 CXK5B81020TM CXK5B81020 |
131072-word ′ 8-bit High Speed Bi-CMOS Static RAM
131072-word ? 8-bit High Speed Bi-CMOS Static RAM
131072-word 8-bit High Speed Bi-CMOS Static RAM
131072-word 8-bit High Speed Bi-CMOS Static RAM 131072字?8位高速双CMOS静态RAM
128 x 64 pixel format, LED Backlight available 131072字?8位高速双CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOSSTATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M564R16DJ-10 M5M564R16DJ-12 M5M564R16DJ-15 M5M56 |
From old datasheet system
1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静态RAM
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 1048576位（65536字由16位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
| CXK58512M CXK58512M-10LL CXK58512M-55LL CXK58512M- |
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
RG-62A/U TYPE COAX RoHS Compliant: Yes 65536字8位高速CMOS静态RAM
Twinaxial Cable; Impedance:78ohm; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 2092; Conductor Material:Copper; Conductor Plating:Tin RoHS Compliant: Yes
|
Sony, Corp.
Sony Corporation
|
| HM6208HSERIES 6208H HM6208H HM6208HJP-35 HM6208HJP |
65,536-word ′ 4-bit High Speed CMOS Static RAM
From old datasheet system
65,536-WORD ? 4-BIT HIGH SPEED CMOS STATIC RAM
|
Hitachi Semiconductor
|
| HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
