| PART |
Description |
Maker |
| AM486DE2-66V8THC AM486DE2-66V8TGC |
8-Kbyte Write-Through Embedded Microprocessor
|
Advanced Micro Devices
|
| A80486DX4 |
Embedded Write Back Enhanced
|
Intel
|
| GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209
36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| 79RC32364 79RC32V364100DA 79RC32V364100DAI 79RC32V |
RISController Embedded 32-bit Microprocessor, based on RISCore32300
RISControllerTM Embedded 32-bit Microprocessor
RC32364 Advanced 32-Bit RISC Embedded Microprocessor
|
http://
IDT[Integrated Device Technology]
|
| TDA5360UK TDA5360UH |
Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 12 CHANNEL READ WRITE AMPLIFIER CIRCUIT, UUC75
|
NXP Semiconductors N.V.
|
| VM710N415SSL VM710N430SSL VM710N430VSL VM710N430CP |
8-Channel Disk Read/Write Circuit
6-Channel Read/Write Circuit 6通道写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
GTM, Corp.
Microchip Technology, Inc.
RECOM Electronic GmbH
|
| AT34C02BN-10SU-1.7 AT34C02B-14 |
Two-wire Serial EEPROM with Permanent and Reversible Software Write Protect 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Hardware Write Protection for the Entire Array
|
Atmel, Corp.
ATMEL Corporation
|
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| VM310R-4PO VM310-6PL VM310-6PO VM310R-6PO VM310R-6 |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Digital Data Communications GmbH
Electronic Theatre Controls, Inc.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
