PART |
Description |
Maker |
HFR8A06S |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
HFR8A06GF |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
HFR8A06 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
HFR8L06 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
HFR20A06P |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
HFR30A06 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
HFR30A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
AB80-C1500RG AB380-C1500RG AB250-C1500RG AB40-C150 |
200 V, 1.5 A Avalanche glass passivated bridge rectifier 900 V, 1.5 A Avalanche glass passivated bridge rectifier 600 V, 1.5 A Avalanche glass passivated bridge rectifier 100 V, 1.5 A Avalanche glass passivated bridge rectifier
|
EIC discrete Semiconductors
|
MP1510 MP1505 MP1507 MP1503 MP154 MP158 MP151 MP15 |
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes) 单相玻璃钝化硅桥式整流器(电压范50000伏特,电流十五安培) (MP1505 - MP1510) SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (MP151 - MP1510) SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
|
RECTRON[Rectron Semiconductor]
|
1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN Diodes Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|