PART |
Description |
Maker |
HFR20A06 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
HFR6A06F |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
HFR15L06F |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
HFR30A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
MSB20A |
GLASS PASSIVATED SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS
|
HY ELECTRONIC CORP.
|
1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER
|
Chenyi Electronics http://
|
EGP30A- EGP30J EGP30A |
Fast Rectifiers (Glass Passivated) 3.0 Ampere Glass Passivated High Efficiency Rectifiers(平均整流电流3.0安培高效率玻璃钝化整流器)
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥 Bridge Rectifiers (Power) 桥式整流器(电力 10 Amp Glass Passivated Bridge Rectifier 10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC]
|
1N4003G-A 1N4003G-B 1N4001G-A 1N4001G-B 1N4002G-B |
1.0A GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1.0A GLASS PASSIVATED RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1.0A GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1.0A GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1.0A GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc. Anderson Power Products, Inc. Diodes, Inc.
|
GS1A GS1B GS1D GS1G GS1J GS1K GS1M |
Standard Recovery Pack: SMA SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT?/a> 1.0A
|
Gulf Semiconductor http://
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|