PART |
Description |
Maker |
IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
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International Rectifier
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MBR861 MBR862 MBR864 MBR866 |
Fast recovery power rectifier. 40A, 100V. Fast recovery power rectifier. 40A, 200V. Fast recovery power rectifier. 40A, 400V. Fast recovery power rectifier. 40A, 600V.
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Motorola
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BUV20D BUV20 BUV60 BUV20-D |
Power 50A 125V NPN TO204 SWITCHMODE Series NPN Silicon Power Transistor SWITCHMODE Series NPN Silicon Power Transistor SITCHMODE Series NPN Silicon Power Transistor
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ONSEMI[ON Semiconductor]
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1N1188A 1N1190A 1N1186A 1N1186 1N1186RA |
400V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 600V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 200V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 200V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
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International Rectifier
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SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2 TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4 TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50 FUSE 1A FA SMT 1206 TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五(DRM)的| 300口(T)的有效值|00VAR50 TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五(DRM)的| 150A口(T)的有效值|00AB TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五(DRM)的| 300口(T)的有效值|培训基金,一辆M23 TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五(DRM)的|0A口(T)的有效值|培训基金- M12 TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五(DRM)的| 50A条口(T)的有效值|08VARM8
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Cornell Dubilier Electronics, Inc. EPCOS AG SIEMENS AG
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STP40N20 |
N-CHANNEL 200V - 0.040 Ohm - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET
|
ST Microelectronics
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Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五(DRM)的| 40A条口(T)的有效值|18 TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 5A条口(T)的有效值|20 TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 25A条口(T)的有效值|20 TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 4A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五(DRM)的| 4A条口T)的有效值|20 TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 3A条口(T)的有效值|02 TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|20 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五(DRM)的| 40A条口(T)的有效值|18 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|20 TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五(DRM)的| 40A条口(T)的有效值|18 TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 THYRISTOR MODULE|TRIAC 晶闸管模块|可控 TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|02 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 8A条口(T)的有效值|20 TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 700V的五(DRM)的| 25A条口(T)的有效值|20 可控硅| 200伏五(DRM)的| 10A条口(T)的有效值|20 TRIAC|300V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-39 TRIAC|600V V(DRM)|8A I(T)RMS|TO-202 TRIAC|500V V(DRM)|8A I(T)RMS|TO-202 TRIAC|200V V(DRM)|3A I(T)RMS|TO-202 TRIAC|500V V(DRM)|25A I(T)RMS|TO-220 TRIAC|200V V(DRM)|8A I(T)RMS|TO-202 TRIAC|600V V(DRM)|3A I(T)RMS|TO-220 TRIAC|400V V(DRM)|8A I(T)RMS|TO-202 TRIAC|800V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13 TRIAC|500V V(DRM)|15A I(T)RMS|TO-3 TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|20A I(T)RMS|TO-220 TRIAC|200V V(DRM)|6A I(T)RMS|TO-220 TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|10A I(T)RMS|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|15A I(T)RMS|TO-220 TRIAC|200V V(DRM)|15A I(T)RMS|TO-220 TRIAC|500V V(DRM)|8A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|500V V(DRM)|12A I(T)RMS|TO-220 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|6A I(T)RMS|TO-220 TRIAC|700V V(DRM)|40A I(T)RMS|TO-218 TRIAC|200V V(DRM)|4A I(T)RMS|TO-220 TRIAC|600V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|5A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
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Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
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IRFL210 IRFL210TR |
200V Single N-Channel HEXFET Power MOSFET in a SOT-223 package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
|
International Rectifier
|
IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
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IRF[International Rectifier]
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IRC630 IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A) 200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
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IRF[International Rectifier]
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IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
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IRF[International Rectifier]
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