| PART |
Description |
Maker |
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF6S21100HR3 MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
Freescale Semiconductor, Inc
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9045M |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc.
|
| AGR21010E |
N-Channel E-Mode Lateral MOSFET
|
Agere Systems
|
| A2T20H160W04N A2T20H160W04NR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21H100-25S A2T21H100-25SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21S260-12S A2T21S260-12SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT18H357-24N AFT18H357-24NR6 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| PD27025F |
25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET
|
PEAK electronics GmbH
|
