| PART |
Description |
Maker |
| HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM)
Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24
Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp.
Intersil Corporation
|
| HCTS365MS HCTS365D HCTS365DMSR HCTS365HMSR HCTS365 |
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Radiation Hardened Hex Buffer/Line Driver Non-Inverting 辐射硬化六角缓冲线路驱动器非反相
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier
Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大
CONNECTOR ACCESSORY
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation
Intersil, Corp.
http://
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-82C54RH HS1-82C54RH HS1-82C54RH-8 HS1-82C54RH-Q |
From old datasheet system
Radiation Hardened CMOS Programmable Interval Timer
Radiation Hardened CMOS RProgrammable Interval TimerS
|
INTERSIL[Intersil Corporation]
|
| HS9-4424BRH-8 HS9-4424BRH-Q HS9-4424RH HS9-4424RH- |
SWITCH SLIDE DPDT RT ANG L=9MM 辐射加固双，非逆变电源的MOSFET驱动
Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers(抗辐射双路同相功率MOSFET驱动
Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
Radiation Hardened Dual/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
| HS-81C55RH HS9-81C55RH HS1-81C55RH FN3039 HS-81C56 |
Radiation Hardened 256 x 8 CMOS RAM
From old datasheet system
UTILIBOX W/MTG BRKT, ST A, CC
|
INTERSIL[Intersil Corporation]
|
| XQR4000XL XQR4013XL-3CB228M XQR4036XL-3CB228M XQR4 |
QPRO XQR4000XL Radiation Hardened FPGAs
QPRO radiation hardened FPGA.
|
Xilinx
|
| HS2-2620RH-Q HS-2620RH HS-2622RH HS2-2622RH-Q HS7B |
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 6000 uV OFFSET-MAX, MBCY8
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 100 MHz BAND WIDTH, CDIP8
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 4000 uV OFFSET-MAX, 100 MHz BAND WIDTH, CDIP8
Radiation Hardened/ Very Wideband/ High Input Impedance Uncompensated Operational Amplifiers
Radiation Hardened, Very Wideband, High
Input Impedance Uncompensated
Operational Amplifiers(抗辐射、宽带、高输入阻抗、低输入偏置电流非补偿性运算放大器)
|
Intersil, Corp.
Intersil Corporation
|
| SM602HRR SM600HRR SM612 SM600 SM610 SM612R SM600R |
(SM600 - SM612) SWITCHING REGULATOR POWER OUTPUT STAGES
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS SPECIALTY ANALOG CIRCUIT, MBCY4
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
|
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
