PART |
Description |
Maker |
LH21256Z-12 LH21256Z-15 LH21256-10 LH21256-12 LH21 |
x1 Page Mode DRAM x1 Nibble Mode DRAM x1半字节模式DRAM
|
Sharp Electronics, Corp. Rubycon, Corp.
|
MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
Austin Semiconductor http://
|
MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40 DRAM / FAST PAGE MODE TYPE 262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD OKI electronic componets
|
MT4C16270 |
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
|
Micron Technology
|
AAA2800 AAA2801 |
(AAA2800 Series) Static Column Decode Mode CMOS 256k x 1 DRAM (AAA2800 Series) Page Mode CMOS 256k x 1 DRAM
|
NMB Technologies
|
IBM11N4645CB-60J IBM11N4735CB-50J |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块 x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd. Electronic Theatre Controls, Inc.
|
MT9LD272G-7S MT9LDT272G-7 MT9LDT272G-7XS MT9LD272G |
x72 Fast Page Mode DRAM Module x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd.
|
HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144 x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc. NXP Semiconductors N.V.
|
MB8504E032AA-60 MB8504E032AA-70 |
4 M×32 BITS Hyper Page Mode DRAM Module(CMOS 4 M×32 位超级页面存取模式动态RAM模块) 4米32位超页模式内存的CMOS米32位超级页面存取模式动态内存模块) 4 M?32 BITS Hyper Page Mode DRAM Module(CMOS 4 M?32 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu, Ltd. Fujitsu Limited
|
MT4C4001JECG-10_883C MT4C4001JECG-10_IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
http:// Austin Semiconductor
|