PART |
Description |
Maker |
MCSO1H_C MCSO1_TBE MCSO1 MCSO1/TBE |
5V CMOS Oscillator Mil Temp
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GOLLEDGE[Golledge Electronics Ltd]
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SM99122B2E12.288000MHZ SM99122B2E12.441600MHZ SM99 |
CRYSTAL OSCILLATOR, CLOCK, 12.288 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 12.4416 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 12.5 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 12 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 12.352 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 14.31818 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 19.44 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 22.5 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 20.16 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 33.333 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 33.33333 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 33.33 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 49.152 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 36.864 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 38.912 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 60 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 54 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 39.3984 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 43.18 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 22.22 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 42 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 46 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 48.933 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 36 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 5 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 32.768 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 22.2222 MHz, CMOS OUTPUT
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Merrimac Industries, Inc.
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ADA4891-3ARU-EBZ ADA4891-4ARU-EBZ ADA4891-1ARJ-EBZ |
Low Cost CMOS, High Speed, Rail-To-Rail Amplifiers, Package: MICRO SOIC, 8 Pin, Ind Temp -40°C – 125 °C, 7" Tape and Reel MSOP RM-8 H1U OP-AMP, PDSO8 Low Cost CMOS, High Speed, Rail-To-Rail Amplifiers, Package: SOIC 150 MIL, 8 Pin, Ind Temp -40°C – 125 °C, 7" Tape and Reel R-8 OP-AMP, PDSO8 Low Cost CMOS, High Speed, Rail-To-Rail Amplifiers, Package: SOIC 150 MIL, 8 Pin, Ind Temp -40°C – 125 °C, 13" Tape and Reel R-8 OP-AMP, PDSO8 Low Cost CMOS, High Speed, Rail-To-Rail Amplifiers, Package: MICRO SOIC, 8 Pin, Ind Temp -40°C – 125 °C, MSOP 13" Tape and Reel RM-8 H1U OP-AMP, PDSO8 Low Cost CMOS, High Speed, Rail-To-Rail Amplifiers , Package: SOIC 150 MIL, 8 Pin, Temp: Ind -40°C – 125 °C OP-AMP, PDSO8 Low Cost CMOS, High Speed, Rail-To-Rail Amplifiers , Package: SOIC 150 MIL, 8 Pin, Temp: Ind -40°C – 125 °C, 7" Tape and Reel R-8 Low Cost CMOS, High Speed, Rail-To-Rail Amplifiers , Package: SOT23 5/6/8 Leads, 5 Pin, Temp: Ind -40°C – 125 °C, 13" Tape and Reel RJ-5 H1W Low Cost CMOS, High Speed, Rail-To-Rail Amplifiers, Package: MICRO SOIC, 8 Pin, Ind Temp -40°C – 125 °C, MSOP RM-8 H1U
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Analog Devices, Inc. ANALOG DEVICES INC
|
CC4V-T1 CC4V |
SM WATCH CRYSTAL MIL TEMP 钐表水晶军用温度
|
Golledge List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
|
CC1V-T1M CC1V-T1A CC1V |
SM Crystal Mil Temp Low Freq
|
Golledge Electronics Ltd. GOLLEDGE[Golledge Electronics Ltd]
|
CC6F-T1A CC6F-T1M CC6F |
SM Crystal Mil Temp High Freq Fundamental
|
GOLLEDGE[Golledge Electronics Ltd]
|
CC6F CC6F06 |
SM Crystal Mil Temp High Freq Fundamental
|
Golledge Electronics Ltd
|
AM29LV400B-100WAC AM29LV400B-100WACB AM29LV400B-10 |
PTSE 6C 6#20 SKT RECP Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Metal; Series:MS C-26482 Series I; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, CAP 0.47UF 50V 50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU PTSE 3C 3#20 PIN RECP 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 100 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 150 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
PVZ3A502A01B00 PVZ3A501A01B00 PVZ3A201A01B00 PVZ3A |
16MHZ, MLF, IND TEMP(MCU AVR) 16MHZ, MLF, COM TEMP(MCU AVR) 8MHZ, PDIP, COM TEMP(MCU AVR) 修边机贴200R 8MHZ, PDIP, IND TEMP, GREEN(MCU AVR) IN-UNSAWN WAFER 7 MIL(MCU AVR) 8MHZ, PDIP, IND TEMP(MCU AVR) 8MHZ, MLF, COM TEMP(MCU AVR)
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Panasonic Industrial Solutions
|
5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
VSS4-B3B-25M00 VSS4-B6B-25M00 VSS4-B6A-25M00 VSS4- |
3.3 Volt Spread Spectrum CMOS Oscillator CRYSTAL OSCILLATOR, CLOCK, 33 MHz, CMOS OUTPUT
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Vectron International, Inc
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