| PART |
Description |
Maker |
| FSF9250R FSF9250D FSF9250R1 FN4090 FSF9250R4 FSF92 |
From old datasheet system
15A/ -200V/ 0.290 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| APT6029BLL |
POWER MOS 7 600V 21A 0.290 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| WSE0805KBEBA WSE0805KBEEK WSE0805KBETG WSE0805KFEE |
Power Metal Strip㈢ Resistors (Extended Range) Surface Mount
Power Metal Strip? Resistors (Extended Range) Surface Mount
Power Metal Strip庐 Resistors (Extended Range) Surface Mount
Power Metal Strip垄莽 Resistors (Extended Range) Surface Mount
Power Metal Strip? Resistors (Extended Range) Surface Mount
|
Vishay Siliconix
|
| APTGT200DH60G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 6702 |
0 MHz - 2000 MHz, 290 deg - RF/MICROWAVE COAXIAL MECHANICAL PH SHIFTER
DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER
|
SPECTRUM CONTROL INC
API Technologies Corp
|
| KM416V4104CS-45 KM416V4104C KM416V4004C KM416V4004 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| IXTK90N25L2 IXTX90N25L2 |
LinearL2 Power MOSFET w/Extended FBSOA
|
IXYS Corporation
|
| SSF-LXH240GGD |
290 E, HELEN ROAD PALATINE, IL 60067-6976
|
LUMEX INC.
|
| IXTN200N10L2 |
Linear L2TM Power MOSFET w/ Extended FBSOA
|
IXYS Corporation
|
| TOP247R TOP247Y TOP244R TOP244Y TOPP244R TOP243P T |
Family Extended Power, Design Flexible,Integrated Off-line Switcher
|
Power Integrations Inc
|
