PART |
Description |
Maker |
04199.60.17 00604.63.01 00606.63.01 05656.63.10 01 |
Type SRDT . 50 Amps . 60?C . 300 Volts
|
General Cable Technologies Corporation
|
SPD630SMS SPD605 SPD605SMS SPD610 SPD620 SPD630 |
6.0 AMPS 50 - 300 VOLTS 40 ns HYPERFAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SPD230SMS SPD205 SPD205SMS SPD210 SPD210SMS SPD220 |
2.0 AMPS 50 - 300 VOLTS 25 ns HYPERFAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
MTP2P50E10 |
Power MOSFET 2 Amps, 500 Volts
|
ON Semiconductor
|
SDR9105N SDR9103N |
100 AMP 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER 100 A, 300 V, SILICON, RECTIFIER DIODE, TO-258AA
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
10N50L-TF1-T 10N50G-TF1-T 10N50G-TA3-T 10N50L-TA3- |
10 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
12N50L-TF1-T 12N50G-TF1-T 12N50G-TA3-T 12N50L-TA3- |
12 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
1N50 1N50L-TA3-T 1N50G-TA3-T |
1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
NTP8N50-D |
Power MOSFET 8 Amps, 500 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
NTP12N50-D |
Power MOSFET 12 Amps, 500 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|