| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| PNX7850 |
High Speed CD-RAM Processor
|
Bexperia
|
| IDT70V9269L12PRF IDT70V9269L12PRFI IDT70V9279S9PRF |
32K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
16K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
From old datasheet system
Small Signal Diode
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 12 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 25 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 20 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 18 ns, PQFP128
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 高.3 32K的16 SYNCHRONOU S双，端口静态内
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
From old datasheet system
128*8HIGH SPEED COMOS STATIC RAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| W26L010A W26L010A-10 W26L010A-12 W26L010AJ-10 W26L |
JT 10C 10#20 PIN RECP
From old datasheet system
64K X 16 High Speed CMOS Static RAM
HIGH SPEED SRAM 64Kx16
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc]
ISSI [Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| IDT7054L IDT7054L20G IDT7054L20GB IDT7054L20GI IDT |
HIGH-SPEED 4K x 8 FourPort STATIC RAM 4K X 8 FOUR-PORT SRAM, 35 ns, PQFP128
4K x 8 FourPortTM RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IDT7132SA100L48I IDT71321SA55TF IDT7142LA35CI IDT7 |
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 55 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 25 ns, PQFP64
P-Channel 1.8V Specified PowerTrench MOSFET 2K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 20 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 2K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS 高K × 8双端口静态RAM的中
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
http://
|
| K6R4004C1C-C K6R4004C1C-I20 K6R4004C1C-C10 K6R4004 |
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAMV的工作）
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静RAMV的工作）
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAM5V的工作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| P4C174-25CM P4C174-25CMB P4C174-25CC P4C174-8PM P4 |
HIGH SPEED 8K x 8 CACHE TAG STATIC RAM 高8K的高速缓存标记8静态RAM
HIGH SPEED 8K x 8 CACHE TAG STATIC RAM 高K的高速缓存标记8静态RAM
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| P4C147-15CM P4C147-15CC P4C147-25CM P4C147-25CC P4 |
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 超高K的1静态CMOS存储
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 20 ns, CDIP18
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 15 ns, CQCC18
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 15 ns, CDIP18
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 25 ns, CDIP18
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 20 ns, CQCC18
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
Electronic Theatre Controls, Inc.
|
