| PART |
Description |
Maker |
| HMD1M4Z1 |
4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
|
Hanbit Electronics Co.,Ltd.
|
| M76DW63000A70Z |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 8Mbit/4Mbit SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
|
| K4S640432D-TC_L80 K4S640432D K4S640432D-TC_L10 K4S |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MSM51V16165A |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM51V16160D MSM51V16160DSL |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
OKI electronic components
|
| MSM5117800C MSM5117800C-60TS-L |
2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
OKI[OKI electronic componets]
OKI electronic components
|
| MSM51V17405D MSM51V17405DSL MSM51V17405D-70SJ MSM5 |
DRAM / FAST PAGE MODE TYPE
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 4194304字4位动态随机存储器：快速页面模式型与江
IC 4-BIT 2-PORT BUS SW 16-QSOP 4194304字4位动态随机存储器：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
TE Connectivity, Ltd.
|
| UN1210 UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 U |
C; Package/Case:16-SO; Supply Voltage Max:3.6V; Page/Burst Read Access:1.4ms
Flash Memory IC; Access Time, Tacc:110ns; Package/Case:64-BGA; Supply Voltage:3V; Memory Size:64Mbit
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| IBM11N4735BB-70 IBM11N4645BB-60 |
x72 EDO Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
