| PART |
Description |
Maker |
| AM41PDS3228D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Page Mode Flash Memory and 8 Mbit
From old datasheet system
|
AMD Inc
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash
From old datasheet system
(SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| M36W108 M36W108B M36W108B100ZM1T M36W108B100ZM5T M |
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AM42DL16X4D |
16 Mbit (x8/x16) Flash and 4 Mbit (x16) Static RAM (Preliminary)
From old datasheet system
|
AMD Inc
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏，只有闪存的CMOS
|
PMC-Sierra, Inc.
|
| AM50DL128CG |
2 x 64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 64 Mbit (2 M x 16-Bit) Pseudo Static RAM (Preliminar
From old datasheet system
|
AMD Inc
|
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SPBM505-4.2X4 SPBM505-4.2X1 SPBM505-4.2X4MA |
300 AMPS DISCHARGE 20 AMPS CHARGE CURRENT PROGRAMABLE BATTERY BYPASS MODULE SILICON, RECTIFIER DIODE
|
SOLID STATE DEVICES INC
Solid State Devices, Inc.
SSDI[Solid States Devices, Inc]
Solid States Devices, Inc.
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
