PART |
Description |
Maker |
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
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BKC International Electronics ETC[ETC]
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1N113 1N100 1N68 1N107 1N128 1N270JTXV 1N143 1502B |
100 V, 60 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 10 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES 12 V, 500 mA, gold bonded germanium diode 50 V, 500 mA, gold bonded germanium diode 75 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode 125 V, 500 mA, gold bonded germanium diode 85 V, 500 mA, gold bonded germanium diode 30 V, 500 mA, gold bonded germanium diode 40 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES
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Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC BKC International Electronics List of Unclassifed Man...
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Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体 CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体 Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting 24 V, PNP germanium transistor 20 V, PNP germanium transistor
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Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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1N60 |
Germanium Glass Diodes
|
Central Semiconductor
|
BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
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NXP Semiconductors
|
GL607 OA180 OA1182 OA1161 OA1154 |
10 V, 300 mA, gold bonded germanium diode 20 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 140 V, 500 mA, gold bonded germanium diode 55 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
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1N34A |
GERMANIUM DIODE 0.05 A, 75 V, GERMANIUM, SIGNAL DIODE, DO-7
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
1N3469 1N3592 1N3483 1N3470 |
35 V, 500 mA, gold bonded germanium diode 25 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES 8 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC] List of Unclassifed Manufacturers
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BFP620F07 BFP620FH7764 BFP620F |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon Germanium RF Transistor NPN Silicon Germanium RF Transistor
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Infineon Technologies AG Infineon Technologies A...
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OA1182 |
GERMANIUM DIODE
|
BK
|
OA1154 |
GERMANIUM DIODE
|
BK
|
1N4502BK 1N295TR 1N4502BKLEADFREE |
0.1 A, 20 V, GERMANIUM, SIGNAL DIODE, DO-7 0.05 A, 40 V, GERMANIUM, SIGNAL DIODE, DO-7
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CENTRAL SEMICONDUCTOR CORP
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