PART |
Description |
Maker |
LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs 256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE 256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE 256K (32768 words X 8 bits) SRAM Control Pins: OE and CE 256K (32768 words 8 bits) SRAM Control Pins: OE and CE SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC From old datasheet system
|
Intersil Sanyo Semiconductor Corp SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
LC331632M-10 LC331632M-12 LC331632M-70 LC331632M-8 |
512K (32768 words X 16 bits) Pseudo-SRAM
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位)
|
Elpida Memory, Inc.
|
LC32464M-80 LC32464P |
256K (65536 words X 4 bits) DRAM Fast Page Mode
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
AT28BV256 AT28BV256-20 AT28BV256-25 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256K (32K x 8) Battery-Voltage Parallel EEPROMs
|
Atmel Corp. ATMEL[ATMEL Corporation]
|
EDD2508AKTA-5C EDD2508AKTA-5 EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
EDS1216AABH EDS1216CABH |
(EDS1216AABH / EDS1216CABH) 128M bits SDRAM (8M words x 16 bits)
|
Elpida Memory
|
EDD2516AKTA-6B-E EDD2516AKTA-7B-E EDD2516AKTA-7A-E |
256M bits DDR SDRAM (16M words x 16 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
EDD1232AAFA-7A-E EDD1232AAFA EDD1232AAFA-6B-E |
128M bits DDR SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
EDD1216AATA-7B-E EDD1216AATA EDD1216AATA-6B-E EDD1 |
128M bits DDR SDRAM (8M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
EDS2516ADTA-75-E EDS2516ADTA-75 |
256M bits SDRAM (16M words x 16 bits)
|
ELPIDA[Elpida Memory]
|