| PART |
Description |
Maker |
| IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM
x8 SDRAM x8 SDRAM内存
x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc.
Hanbit Electronics Co., Ltd.
|
| HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800C |
x16 SDRAM
179 POS FR-4 PGA SOCKET
x8 SDRAM x8 SDRAM内存
|
Infineon Technologies AG
|
| W986416CH W986416CH-8H |
1M x 16 BIT x 4 BANKS SDRAM
x16 SDRAM
|
Winbond Electronics Corp
|
| HYMD132645BL8-H HYMD132645BL8-M HYMD132645BL8-L HY |
SDRAM|DDR|32MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX64 |的CMOS |内存| 184PIN |塑料
32Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x16 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
SUSUMU Co., Ltd.
|
| MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| W981216AH-8H W981216AH-75 W981216AH |
2M x 16 bit x 4 Banks SDRAM
x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
| K4X51163PC-FE K4X51163PC-LE |
32M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
