| PART |
Description |
Maker |
| 316966-002 82G33 82P35 |
Graphics and Memory Controller Hub
|
Intel Corporation
|
| 290676-002 |
Intel 810E Chipset: 82810E Graphics and Memory Controller Hub (GMCH)
|
Intel Corporation
|
| RG82855GMESL72L JG82855GMESL7VN |
Intel? 855GM/855GME Chipset Graphics and Memory Controller Hub (GMCH)
|
Intel Corporation
|
| VT8601 |
Single-Chip Slot-1 / Socket-370 PCI North Bridge With Integrated AGP 2D / 3D Graphics Accelerator and Advanced Memory Controller
|
ETC
N.A.
|
| APD-256G064 |
256 x 64 Graphics Display with Drive Electronics, TTL Level Data Interface, Large Bright Characters and Graphics, Slim Profile, Highly Visible for Long-Distance Viewing
|
Vishay
|
| HYB18H256321BF-11/12/14 HYB18H256321BF-10 HYB18H25 |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.21 ns, PBGA136
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 256兆GDDR3显卡内存GDDR3显卡内存
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.22 ns, PBGA136
|
Qimonda AG
|
| APD-128G064C |
128 x 64 Graphics Display with ASCII Input Controller, DC Converter, Drive Circuitry, Bright and Vivid Graphics, Parallel Interface or RS-232 Serial Interface, Powerful Software Commands
|
Vishay
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| HYB18H256321BF-10 HYB18H256321BF-11 HYB18H256321BF |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
|
http://
Qimonda AG
|
| HYB18H512321AF-20 HYB18H512321AF-12 |
16M X 32 SYNCHRONOUS GRAPHICS RAM, 0.35 ns, PBGA136 11 X 14 MM, GREEN, PLASTIC, MO-207IDR-Z, TFBGA-136
16M X 32 SYNCHRONOUS GRAPHICS RAM, 0.22 ns, PBGA136
|
Infineon Technologies AG
|
| AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
