| PART |
Description |
Maker |
| TC514101AJ-70 TC514101AP-80 |
4M X 1 NIBBLE MODE DRAM, 70 ns, PDSO20
4M X 1 NIBBLE MODE DRAM, 80 ns, PDIP18
|
|
| AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存，未定义建筑
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
|
Lin Engineering, Inc.
Unisonic Technologies Co., Ltd.
Sullins Connector Solutions, Inc.
Cypress Semiconductor, Corp.
|
| MT4C4001JCZ-10_883C MT4C4001JCZ-10_IT MT4C4001JCZ- |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
AUSTIN[Austin Semiconductor]
|
| AK491024GP-12 AK491024GK-12 AK491024GK-80 AK491024 |
x(8 1) Page Mode DRAM Module
× 1）静态列模式DRAM模块
× 1）页面模式内存模
x(8 1) Static Column Mode DRAM Module ×8 1）静态列模式DRAM模块
|
Molex, Inc.
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| HYM532100M-80 HYM532100M-70 HYM532100MG-80 HYM5321 |
x32 EDO Page Mode DRAM Module
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| MSC23V47257TA-XXBS18 MSC23V47257SA-XXBS18 MSC23V47 |
4,194,304-Word ′ 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4194304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word ? 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304词?72位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MB8504E032AA-60 MB8504E032AA-70 |
4 M×32 BITS Hyper Page Mode DRAM Module(CMOS 4 M×32 位超级页面存取模式动态RAM模块) 4米32位超页模式内存的CMOS米32位超级页面存取模式动态内存模块）
4 M?32 BITS Hyper Page Mode DRAM Module(CMOS 4 M?32 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu, Ltd.
Fujitsu Limited
|
| AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
|
| HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM
2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode)
2M x 8-Bit Dynamic RAM
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
