PART |
Description |
Maker |
HM13 HM13-05001 HM13-05002 HM13-05003 |
High Inductance High Frequency Toroidal Inductors
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Electronic Theatre Controls, Inc.
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VN920-B5 VN920SOTR-E |
SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY INDUCTOR, AXIAL, 12UH; Inductor type:Choke; Inductance:12uH; Tolerance, inductance: /-20%; Resistance:0.04R; Current, DC max:4A; Frequency, resonant INDUCTOR, AXIAL, 22UH; Inductor type:Choke; Inductance:22uH; Tolerance, inductance: /-20%; Resistance:0.07R; Current, DC max:3A; Frequency, resonant:110MHz; Case style:Axial; Material, core:Ferrite; Tolerance, :20%; Tolerance, RoHS Compliant: Yes
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STMicroelectronics 意法半导
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8230-90-RC 8230-94-RC 8230-78-RC 8230-76-RC 8230-5 |
Inductor; Series:8230; Inductance:820uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:3.8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:100nH; Inductance Tolerance: /- 10 %; Q Factor:40; Self Resonant Frequency:690MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.1 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:270uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:220uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:9MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:39uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:22MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:15uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:35MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:18uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:32MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:27uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:22MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:2.7uH; Inductance Tolerance: /- 10 %; Q Factor:37; Self Resonant Frequency:100MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 2.7 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:560nH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:300MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.56 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:6.8uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:60MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 6.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:1.5uH; Inductance Tolerance: /- 10 %; Q Factor:28; Self Resonant Frequency:140MHz; Core Material:Iron; Leaded Process Compatible:Yes Inductor; Series:8230; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:75MHz; Core Material:Iron; Leaded Process Compatible:Yes Inductor; Series:8230; Inductance:3.3uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:90MHz; Core Material:Iron; Leaded Process Compatible:Yes
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Bourns, Inc. BOURNS INC
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FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
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Mitsubishi Electric Corporation
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PM1812-221J-RC PM1210-470J-RC PM1812-470J-RC PM181 |
SMT Chip Inductors SMD Inductor; Series:PM1210; Inductance:10uH; Inductance Tolerance: /- 5 %; Q Factor:30; Self Resonant Frequency:36MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current Rating:150mA; Leaded Process Compatible:Yes SMD Inductor; Series:PM1812; Inductance:3.3uH; Inductance Tolerance: /- 5 %; Q Factor:50; Self Resonant Frequency:45MHz; Terminal Type:PCB Surface Mount; Current Rating:335mA; Leaded Process Compatible:Yes SMD Inductor; Series:PM1210; Inductance:1.5uH; Inductance Tolerance: /- 5 %; Q Factor:28; Self Resonant Frequency:85MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current Rating:370mA; Leaded Process Compatible:Yes
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Bourns Electronic Solutions BOURNS INC
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15GN01FA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
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Sanyo Semicon Device
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SDR0602 SDR0602-330KL SDR0602-331K SDR0602-100M SD |
1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Inductor; Series:SDR0602; Inductance:6.8uH; Inductance Tolerance: /- 20 %; Q Factor:18; Self Resonant Frequency:44MHz; Package/Case:470; Terminal Type:PCB Surface Mount; Core Material:Ferrite DQ; Current Rating:1.55A 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Inductor; Series:SDR0602; Inductance:330uH; Inductance Tolerance: /- 10 %; Q Factor:55; Self Resonant Frequency:4MHz; Package/Case:470; Terminal Type:PCB Surface Mount; Core Material:Ferrite DQ; Current Rating:160mA 1 ELEMENT, 8.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD SMD High Power Inductor 高功率贴片电 From old datasheet system
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BOURNS INC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC]
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50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体 REVERSIBLE MOTOR DRIVER NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS HIGH VOLTAGE NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) HIGH-FREQUENCY AMPLIFIER TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR SILICON PNP TRANSISTOR LOW FREQUENCY PNP TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR MEDIUM POWER TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 50 Amps, 60 Volts N-CHANNEL POWER MOSFET
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UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
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MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
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Cornell Dubilier Electronics, Inc. http:// Cornell Dubilier Electronic... Cornell Dubilier Electr...
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U2009-150Y U2009-220Y U2009-3R3Y U2009-4R4Y |
CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:1370mR; Frequency, resonant:40MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:2600mR; Frequency, resonant:30MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 3.3UH; Inductor type:Shielded Power Choke; Inductance:3.3uH; Tolerance, inductance: /-30%; Resistance:320mR; Frequency, resonant:100MHz; Case style:SMD Shielded; Q factor:7; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 4.4UH; Inductor type:Shielded Power Choke; Inductance:4.4uH; Tolerance, inductance: /-30%; Resistance:430mR; Frequency, resonant:85MHz; Case style:SMD Shielded; Q factor:7; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
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BOURNS INC
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2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
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TOSHIBA
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