| PART |
Description |
Maker |
| FZT491 |
Power Dissipation: PC=2W, Continuous Collector Current: IC=1A
|
TY Semiconductor Co., Ltd
|
| FMMT619 |
Collector current:IC=2A, power dissipation :PC=625mw
|
TY Semiconductor Co., Ltd
|
| FCX690B |
2W power dissipation, 6A peak pulse current.
|
TY Semiconductor Co., Ltd
|
| FMMT723 |
625mW power dissipation, IC Up To 10A peak pulse current
|
TY Semiconductor Co., Ltd
|
| SL74HC245 SL74HC245D SL74HC245N HC245 |
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.2W; DC Current Gain Min (hfe):20; Collector Current:0.5A; Power (Ptot):200mW
Octal 3-State Noninverting Bus Transceiver
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
| HC05 MC68HC705X32 |
Bipolar Transistor; Transistor Polarity:Dual P Channel; Power Dissipation:20W; DC Current Gain Min (hfe):25; Collector Current:1A; DC Current Gain Max (hfe):200; Power (Ptot):20W
HCMOS microcontroller unit
|
Motorola, Inc.
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 706FSR330XHBF 187FSR310XJAA 556FSR310XG3JB 306FSR3 |
Reduced case size - High voltage ?Low Leakage ?low dissipation
Reduced case size - High voltage ?Low Leakage ?low dissipation
|
Illinois Capacitor, Inc...
|
| TDA8932B |
The TDA8932B is a high efficiency class-D amplifier with low power dissipation.
|
Philips Semiconductors
|
| ACA0862BRS7P2 |
1 GHz CATV Line Amplifier MMIC Low-power dissipation part
|
Skyworks Solutions
|
| 2SD1620 |
Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
|
TY Semiconductor Co., Ltd
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
