| PART |
Description |
Maker |
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
|
TOSHIBA[Toshiba Semiconductor]
|
| NP160N04TUG-E2-AY D18754EJ1V0DS00 NP160N04TUG NP16 |
SWITCHING N-CHANNEL POWER MOS FET
MOS FIELD EFFECT TRANSISTOR
|
NEC[NEC]
|
| TPCF8303 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| NP109N04PUG-E2-AY NP109N04PUG-E1-AY NP109N04PUG |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
| TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCS8105 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ648 |
P-Channel enhancement MOS FET for load sw
MOS FIELD EFFECT TRANSISTOR
|
NEC
|
| TPCF8102 |
Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|
| NP80N04NHE NP80N04NHE-S18-AY NP80N04DHE NP80N04DHE |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
