| PART |
Description |
Maker |
| FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| WP-MKT4-173250-S WP-MKT4 WP-MKT4-173225-D WP-MKT4- |
MOSFET DUAL N-CHAN 20V SOT-323 窄带调频甚高频发射模
MOSFET N-CHAN DUAL 200MW SOT-363
MOSFET N-CHAN 50V 350MW SOT-23
MOSFET DUAL N-CHAN 50V SOT-26
FM Narrow Band VHF Transmitter Module
|
Electronic Theatre Controls, Inc.
Wireless Products
ETC[ETC]
List of Unclassifed Manufacturers
|
| RFD16N05 RFD16N05SM |
16A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFETs
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| STW55NM60N |
N-channel 600 V, 0.047 Ohm, 51 A MDmesh(TM) II Power MOSFET TO-247
|
ST Microelectronics
|
| PLO3-R015JI PLO3-R12JI PLO3-R0068JI PLO3-R01JI PLO |
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.12 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.0068 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.0056 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 1 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 5 %, 0.13 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.018 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.028 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.0075 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.13 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.0082 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.03 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.022 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.13 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.0062 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.012 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.0287 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.043 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.0051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.068 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.056 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.022 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.1 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.027 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.15 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.18 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.12 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.047 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 10 W, 10 %, 0.039 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Welwyn Components, Ltd.
Vishay Intertechnology, Inc.
|
| PRL0816R-0.047OHM-D-T1 PRL0816R-0.047OHM-D-T5 PRL0 |
RESISTOR, CURRENT SENSE, THIN FILM, 0.33 W, 0.5 %, 100 ppm, 0.047 ohm, SURFACE MOUNT CHIP
RESISTOR, CURRENT SENSE, THIN FILM, 0.33 W, 1 %, 100 ppm, 0.047 ohm, SURFACE MOUNT CHIP
RESISTOR, CURRENT SENSE, THIN FILM, 0.33 W, 2 %, 50 ppm, 0.1 ohm, SURFACE MOUNT CHIP
|
SUSUMU Co., Ltd.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| MCR100JZHFL MCR100 MCR100JZHFS0.068OHM MCR100JZHFS |
Low Ohmic Thick Film Chip Resistors
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
|
Rohm
|
| NS471Q6 NS471B5 |
RES THNFLM NET 9M OHM/900K OHM/90K OHM/9K OHM/900 OHM/100 OH - Bulk
CNS 471 Decade Divider, Single-In-Line Through Hole Thin Film Resistor Networks (Standard)
|
Vishay Sfernice
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
|
