| PART |
Description |
Maker |
| DPZ128X32VI-25M DPZ128X32VI-20M DPZ128X32VI-17M DP |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Glenair, Inc.
SPC Technology
|
| DPZ64X32VS-12B DPZ64X32VS-12C DPZ64X32VS-12I DPZ64 |
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Micro Commercial Components, Corp.
ZETTLER electronics GmbH
Cypress Semiconductor, Corp.
Fujitsu, Ltd.
|
| AS8E128K32P-20 AS7E128K32P-20 AS8E128K32Q-15 AS8E1 |
x32 EEPROM Module X32号的EEPROM模块
|
M.S. Kennedy, Corp.
|
| WE128K32-120G1TC WE128K32-120G1TIA WE128K32-120G2T |
x32 EEPROM Module
EEPROM EEPROM
|
PATLITE, Corp.
Lineage Power, Corp.
|
| PUMA67S16000M-025 PUMA2S16000I-45 PUMA67S16000I-45 |
150NS, PLCC, COM TEMP(FLASH)
15NS, 44 PLCC, COM TEMP(EPLD)
30MHZ, 3.3V, 8 LAP, COM TEMP(FPGA)
20NS, 44 PLCC, COM TEMP(EPLD)
150NS, TSOP, IND TEMP(FLASH)
20NS, 44 TQFP, IND TEMP(EPLD)
120NS, SOIC, IND TEMP(EEPROM)
70NS, TSOP, IND TEMP(EEPROM)
15NS, 68 PLCC, IND TEMP(EPLD)
25NS, 68 PLCC, IND TEMP(EPLD)
30MHZ, 32 TQFP, COM TEMP(FPGA)
120NS, PDIP, IND TEMP(EEPROM)
32 MCROCELL CPLD 1.8V ISP TQFP IND GREEN(EPLD)
x32 SRAM Module X32号的SRAM模块
90NS, TSOP, IND TEMP(EEPROM) X32号的SRAM模块
120NS, PLCC, IND TEMP(EEPROM)
|
DB Lectro, Inc.
TE Connectivity, Ltd.
|
| 5962-9461003HYC 5962-9461003HYA 5962-9461003HZC 59 |
Low-Cost, 230MHz, Single/Quad Op Amps with Rail-to-Rail Outputs and ±15kV ESD Protection
Single/Dual/Quad High-Side Current-Sense Amplifiers with Internal Gain
Ultra-Small, Low-Cost, 210MHz, Single-Supply Op Amps with Rail-to-Rail Outputs and Disable
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Vishay Intertechnology, Inc.
|
| DPZ2MS16XP-25C DPZ2MS16XP-30C DPZ2MS16P-30C |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
AVX, Corp.
|
| W49F102Q-45 W49F102P-45 |
EEPROM|FLASH|64KX16|CMOS|TSSOP|40PIN|PLASTIC
EEPROM|FLASH|64KX16|CMOS|LDCC|44PIN|PLASTIC
64K X 16 FLASH 5V PROM, 45 ns, PDSO40
|
WINBOND ELECTRONICS CORP
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| HY29F080G-70 HY29F080G-12 HY29F080T-70 HY29F080R-9 |
x8 Flash EEPROM 1M X 8 FLASH 5V PROM, 90 ns, PDSO40
8 Megabit (1M x 8), 5 Volt-only, Flash Memory 8兆位米8），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AT45DB081B AT45DB081B-TC-2.5 AT45DB081B-RC-2.5 AT4 |
8-megabit 2.5-volt Only or 2.7-volt Only DataFlash
SERIAL EEPROM|FLASH|4KX264X8|CMOS|BGA|14PIN|PLASTIC
SERIAL EEPROM|FLASH|4KX264X8|CMOS|SOP|28PIN|PLASTIC 1081344 X 8 FLASH 2.7V PROM, PDSO28
SERIAL EEPROM|FLASH|4KX264X8|CMOS|TSSOP|28PIN|PLASTIC 1081344 X 8 FLASH 2.7V PROM, PDSO28
|
Atmel Corp.
Atmel, Corp.
|
| E28F004BX-T70 PA28F400BX-T70 E28F004BX-B70 TE28F00 |
x8 Flash EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Intel, Corp.
|
