| PART |
Description |
Maker |
| ADT6503 ADT6504 |
Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switch in SOT-23 (Monitors Temps from 5°C to 15°C)
|
Analog Devices
|
| FDD8447L08 |
Fast Switching
40V N-Channel PowerTrench? MOSFET 40V, 50A, 8.5mΩ
40V N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.5mヘ
|
Fairchild Semiconductor
|
| CT50E CT35E CT130E CT120E CT200E CT110E |
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|58V V(BO) MAX|50UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|40V V(BO) MAX|50UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|138V V(BO) MAX|25UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|125V V(BO) MAX|25UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|215V V(BO) MAX|15UA I(S)|DO-204AL
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|118V V(BO) MAX|25UA I(S)|DO-204AL 移民部（双向二极管晶闸管）| 118V五（公报）最大| 25UA我（县）|的DO - 204AL
|
NJR
|
| FDD4685 |
-40V P-Channel PowerTrenchMOSFET
40V P-CHANNEL POWERTRENCH MOSFET -40V -32A 27M OHM
|
Fairchild Semiconductor
|
| RJK0456DPB RJK0456DPB13 RJK0456DPB-00-J5 |
40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| CDBZ2240LL-HF |
Halogen Free Low VF Schottky Barrier, V-RRM=40V, V-R=40V, I-O=2A
|
Comchip Technology
|
| CDBUR40 |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=200mA
|
Comchip Technology
|
| FDD4243 |
40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm
|
Fairchild Semiconductor
|
| FDS4141 |
P-Channel PowerTrench? MOSFET -40V, -10.8A, 13.0mΩ
P-Channel PowerTrench㈢ MOSFET -40V, -10.8A, 13.0mヘ
-40V P-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 10.8 A, 40 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| FDB844110 FDB8441-F085 FDB8441F085 |
40V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 40V, 80A, 2.5mΩ
|
Fairchild Semiconductor
|
| AP1623SLA AP1623 AP1623S AP1623SA AP1623SL |
Diodes, Zener; Zener Voltage Typ, Vz:12V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:41-MiniDIP; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:10mA; Gate-Source Cutoff Voltage Max, Vgs(off):-2.5V
PWM Control Step-Down Switching Regulator-Converter
|
ETC
ANACHIP[Anachip Corp]
|
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
