| PART |
Description |
Maker |
| 80-100-220-432/F 80-100-220-232/F 80-100-200-532/F |
SWITCH 4CN/4CN
SWITCH 2CN/2CN
3A Dual MOSFET Drvr, -55C to 125C, 8-CERDIP 300mil, TUBE
3A Dual MOSFET Drvr, -40C to 85C, 16-SOIC 300mil, T/R
30V N-Channel PowerTrench MOSFET
|
MOSFETs
|
| 194L-HE6G-175 800E-N130 800E-N141 800E-N157 194L-H |
6A Power MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE
6A Power MOSFET Drvr, -40C to 85C, 8-PDIP, TUBE
1.5A Floating Load Drvr, 0C to 70C, 8-PDIP, TUBE
SHAFT 230-350MM
SHAFT 24MM X 2
SHAFT 110-235
DISCONNECT HANDLE
HANDLE 80MM GREY/BLACK 拉手80毫米灰色/黑色
HANDLE 60MM GREY/BLACK 拉手60毫米灰色/黑色
|
Pericom Semiconductor, Corp.
NXP Semiconductors N.V.
|
| 74W-502 74W103 74W201 |
TRIMMER 6.35MM CERMET MEHR 5K 0.25W
NEW GEN G AMP MOSFET DRIVER, -40C to 125C, 16-SOIC 300mil, T/R 修边.35mm的金属陶瓷伊朗Mehr 10,000 0.25W
4.5A DUAL MOSFET DRVR INV AND N-INV, -40C to 125C, 8-DFN, T/R
|
SIEMENS AG
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| SI8235-B-IM SI8230-A-IS SI8231-A-IS SI8232-A-IS SI |
4 A HB BASED PRPHL DRVR WITH PWM, PDSO16
0.4 A HB BASED PRPHL DRVR WITH PWM, BGA14
|
Silicon Laboratories Inc.
|
| MIC2546-1BM MIC2546-1BTS MIC2546-2BTS MIC2546-2BM |
Replaced by PT6522 : 0.1 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO16
Dual Programmable Current Limit Switch Preliminary Information 0.1 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO16
Dual Programmable Current Limit Switch(双可编程限流电源高边开 双可编程电流限位开关（双可编程限流电源高边开关）
Replaced by PT6527 : 0.1 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO16
|
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
MICREL INC
|
| IDT7025L55G IDT7025S IDT7025S17PFB IDT7025L17PFB I |
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel
280V N-Channel MOSFET; ; No of Pins: 3; Container: Rail 8K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
250V N-Channel MOSFET; ; No of Pins: 3; Container: Rail 8K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
|
Integrated Device Techn...
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technolog...
|
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
