| PART |
Description |
Maker |
| NR6300EZ |
?30 ?m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
30um InGaAs AVALANCHE PHOTO DIODE
|
California Eastern Labs
|
| NDL5521PD NDL5521P NDL5521P1 NDL5521P1C NDL5521P1D |
2.5 Gb/s optical fiber communications 50 um InGaAs avalanche photo diode modul with MMF . With FC-PC connector, vertical flange.
2.5 Gb/s OPTICAL FIBER COMMUNICATIONS 50 um InGaAs AVALANCHE PHOTO DIODE MODULE WITH MMF
|
NEC
CEL[California Eastern Labs]
|
| C30645E C30662E |
InGaAs Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| PD8932 PD893D2 |
InGaAs AVALANCHE PHOTO DIODES
|
Mitsubishi Electric Semiconductor
|
| PD8XX2 |
INGAAS AVALANCHE POTO DIODES
From old datasheet system
|
Mitsubishi
|
| FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
|
Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| PL10724EJ01V0DS |
φ 30 μm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC
|
Renesas Electronics Corporation
|
| FCI-INGAAS-120 FCI-INGAAS-300 FCI-INGAAS-400 FCI-I |
(FCI-INGAAS-55 - FCI-INGAAS-500) High Speed InGaAs Photodiodes
|
Laser Components
|
| BYW97 BYW97F BYW97G BYW97_3 |
Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:18; No. Strands x Strand Size:7 x 26; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Capacitance:30pF/ft; Conductor Material:Copper RoHS Compliant: Yes
Fast soft-recovery controlled avalanche rectifiers
From old datasheet system
Sound/Security Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:18; No. Strands x Strand Size:7 x 26; Jacket Material
|
NXP Semiconductors
Philips Semiconductors
|
