| PART |
Description |
Maker |
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFP054N |
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A)
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?)
IC/71054 24P P DIP INTERFACE 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.012ohm，身份证\u003d 81A条?
|
IRF[International Rectifier]
Power MOSFET
International Rectifier, Corp.
|
| 2SK2110 |
N-Channel MOSFET
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| IRFP2907 IRFP2907PBF |
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A?
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A?)
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A)
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
IRF[International Rectifier]
|
| IRFR4104PBF IRFU4104PBF IRFR4104TRL IRFR4104TRR |
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mΩ , ID = 42A )
HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) = 5.5mヘ , ID = 42A )
42 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IRF3205 IRF3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
|
IRF[International Rectifier]
|
| IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)
Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
|
IRF[International Rectifier]
|
| IRF520N |
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET（减振钢板基本\u003d 100伏，的Rds（on）\u003d 0.20欧姆，身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)
|
International Rectifier, Corp.
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)
Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
|
IRF[International Rectifier]
|
| IRFI734G IRFI734 |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=450V Rds(on)=1.2ohm Id=3.4A)
Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)
|
IRF[International Rectifier]
|
