PART |
Description |
Maker |
IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB
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IRF[International Rectifier] International Rectifier, Corp.
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IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条? TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
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IRF[International Rectifier] International Rectifier, Corp.
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IRF830S IRF830STRL IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A) Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A) Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
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IRF[International Rectifier]
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IRF3205 IRF3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
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IRF[International Rectifier]
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IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A) Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A) Hexfet? Power MOSFET
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IRF[International Rectifier]
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IRF520N |
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET(减振钢板基本\u003d 100伏,的Rds(on)\u003d 0.20欧姆,身份证\u003d 9.7A Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A) Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)
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International Rectifier, Corp.
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IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) Advanced Process Technology
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IRF[International Rectifier]
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IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
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IRF[International Rectifier]
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IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|4A(丁)|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
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International Rectifier, Corp. Fairchild Semiconductor IRF[International Rectifier]
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IRF1407SPBF IRF1407LPBF IRF1407SPBF-15 |
HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078Ω , ID = 100A ) HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A ) Advanced Process Technology
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International Rectifier
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