| PART |
Description |
Maker |
| MAX9950DCCB MAX9949DCCB MAX9949FCCB MAX9950FCCB |
Dual Per-Pin Parametric Measurement Units
|
Maxim Integrated Products
|
| AT49F002A AT49F002AN AT49F002ANT AT49F002AT |
AT49F002A(N)(T) [Updated 8/03. 19 Pages] 256K x 8 (2M bit). 5-Volt-Only. Top or Bottom Boot Parametric Block Flash
256K x 8 (2M bit), 5-Volt-Only, Top Boot Parametric Block Flash
256K x 8 (2M bit), 5-Volt-Only, Bottom Boot Parametric Block Flash
|
Atmel
|
| LV3100M |
Parametric Equalizer
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 4082A |
Parametric Test System
|
Keysight Technologies
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| 4082F |
Flash Memory Cell Parametric Test System
|
Keysight Technologies
|
| AT49F002T |
256K x 8 (2M bit), 5-Volt-Only, Top Boot Parametric Block Flash
|
Atmel
|
| ML925J11F ML920AA11S ML920J11S ML920L11S ML925AA11 |
Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES 请注意：某些参数的限制可能会有所变化InGaAsP的DFB激光器
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AT49BV002AT AT49BV002ANT |
256K x 8 (2M bit), 2.7-Volt Read and 2.7-Volt Write, Top Boot Parametric Block Flash.
|
Atmel
|
| FDS8958A10 FDS8958A FDS8958AF085 |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench MOSFET
7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FDML7610S |
30V Asymmetric Dual N-Channel MOSFET PowerTrenchPower Stage
Dual N-Channel PowerTrench? MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ
|
Fairchild Semiconductor
|
