| PART |
Description |
Maker |
| TIM6472-25UL TIM5964-12UL09 |
HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz
HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM4450-8UL |
HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM7179-6UL |
HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7785-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM6472-12UL09 |
HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| AWT6109 AWT6109M5P8 AWT6109_REV_2.2 |
From old datasheet system
KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module
The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets.
|
ANADIGICS, Inc.
Anadigics Inc
|
| AWT6106 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc.
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
