PART |
Description |
Maker |
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY5V62CF-S HY5V62CF-7 HY5V62CF |
SDRAM - 64Mb 4 BANKS X 512K X 32BIT SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
KM432S2030C KM432S2030CT-F10 KM432S2030CT-F6 KM432 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
M52S32321A-7.5BIG M52S32321A-10BIG M52S32321A-6BIG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
K4M563233G K4M563233G-FN_G60 K4M563233G-FL_F60 K4M |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
K4S283234F-M |
1M x 32Bit x 4 Banks SDRAM in 90FBGA Data Sheet
|
Samsung Electronic
|
K4S56323LF K4S56323LF-S K4S56323LF-R1L K4S56323LF- |
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W981616BH |
SDRAM 1Mx16 512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY5 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|