| PART |
Description |
Maker |
| HD-4883 HD-4702 FN2955 |
CMOS Programmable Bit Rate Generator
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| ICS932S208 ICS932S208YFLF-T ICS932S208YGLF-T |
Programmable Timing Control Hub⑩ for Next Gen P4⑩ processor
Programmable Timing Control Hub for Next Gen P4 processor
|
ICST[Integrated Circuit Systems]
|
| E0C6S46 |
Advanced Single-Chip CMOS、Super Low Voltage 4-Bit Microcomputer Consisting of the E0C6200 4-Bit CMOS Core CPU,Dot Matrix LCD Driver，Programmable SVD Circuit/Sound Generator(4位高级的、CMOS、单片微型计算机（含4位E0C62000中央处理器核点阵LCD驱动器，可编程SVD电路/声音发生器）)
|
爱普生（中国）有限公
|
| ICS952906A ICS952906AFLFT ICS952906AGLFT |
Programmable Timing Control Hub for Next Gen P4?/a> processor
Programmable Timing Control Hub for Next Gen P4 processor
|
Integrated Circuit Systems
|
| CXD8975BR |
CMOS Bit Rate Reduction Decoder
|
ETC
|
| ICS952601 952601YGLFT 952601YFLFT |
Programmable Timing Control HubTM for Next Gen P4TM Processor
|
Integrated Device Technology
|
| MACH111SP MACH231-14JI/1 MACH131-14JI/1 MACH131-5J |
EMITTER IR 880NM 5MM SMD RADIAL
SUR ABSORBER 7MM 430V 1250A ZNR
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 15FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO INDUSTRIAL CAT6 PATCH CORD 5FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO RJ45 CAT6 PATCH CORD 20FT EE PLD, 15 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQFP44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 20FT EE PLD, 18 ns, PQCC44
RES 3.32K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RJ45-DB9M (DTE)
Silver Mica Capacitor; Capacitance:62pF; Capacitance Tolerance: /- 5%; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| M4A3-512_256-10FAC M4A5-96/48-10VC M4A5-96/48-10VI |
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 5.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP144
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP48
CONNECTOR ACCESSORY
CAP 1500UF 100V ELECT KMH SNAP
High Performance E 2 CMOS In-System Programmable Logic
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| AD9260-15 |
High Speed Oversampling CMOS ADC with 16-Bit Resolution at a 2.5 MHz Output Word Rate
|
Analog Devices
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词？8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
