| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 2SD2150 2SC4115S 2SD2264 A5800368 2SD2150R |
Low Frequency Transistor(20V/ 3A)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SC-62
From old datasheet system
Low Frequency Transistor (20V, 3A)
Low Frequency Transistor(20V, 3A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
| KPD1203K |
Unbiased for low frequency or biased for high frequency measurement
|
ETC[ETC]
|
| P2084A P2082A P2084A-08TT P2082A-08SR P2082A-08ST |
312 MHz, OTHER CLOCK GENERATOR, PDSO8
Low Cost Frequency Multiplier
High Precision Frequency Multipliers
|
ALSC[Alliance Semiconductor Corporation]
http://
|
| 2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR
|
USHA India LTD
|
| FX-104 |
Frequency Translator66.5143MHz Output Locked to Input Frequency 8kHz Clock,Ultra Low Jitter PECL Output频率变换器（155.52MHz时钟输出kHz输入时钟,超低Jitter PECL输出
|
Vectron International, Inc.
|
| 15C01M12 EN7505A EN7505 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat) NPN Single MCP
Low-Frequency General-Purpose Amplifier Applications
Low-Frequency General-Purpose Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SC5397 |
TRANSISTOR FOR LOW FREQUENCY AMPLIFY, MEDIAM FREQUENCY AMPLIFY SILICON NPN EPITAXIAL TYPE MICRO
|
Isahaya Electronics Cor...
|
| UMA1014 UMA1014_3 UMA1014T-T |
PLL FREQUENCY SYNTHESIZER, 1100 MHz, PDSO16
From old datasheet system
Low-power frequency synthesizer for mobile radio communications
|
NXP SEMICONDUCTORS
Philips
|
| LTM4608AMPV-PBF LTM4608AMPV LTM4608AIV-PBF LTM4608 |
Low VIN, 8A DC/DC μModule with Tracking, Margining, and Frequency Synchronization
Low VIN, 8A DC/DC 渭Module with Tracking, Margining, and Frequency Synchronization
Low VIN, 8A DC/DC 楼矛Module with Tracking, Margining, and Frequency Synchronization
|
Linear Technology
|
| 2SK436 |
High-Frequency/Low-Frequency General-Purpose Amp Applications
High-Frequency,Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
Renesas Electronics Corporation
|
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