| PART |
Description |
Maker |
| GS4576S18GL-24IT GS4576S18GL-24T GS4576S18L-18T |
DDR DRAM, PBGA144 ROHS COMPLIANT, UBGA-144
DDR DRAM, PBGA144 UBGA-144
|
GSI Technology, Inc.
|
| HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
| HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM
64M X 4 DDR DRAM, PBGA60
16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU283222AFP-33 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144
|
HYNIX SEMICONDUCTOR INC
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT49H32M18FM-18IT |
32M X 18 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
Central Technologies / CT Magnetics
|
| HYB18T256321F-20 |
8M X 32 DDR DRAM, 0.4 ns, PBGA144 11 X 11 MM, ROHS COMPLIANT, PLASTIC, MO-216, TFBGA-144
|
Infineon Technologies AG
|
| HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| HYMD116645D8J-D4 HYMD116645D8J-D43 HYMD116645D8J-J |
Unbuffered DDR SDRAM DIMM
16M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Hynix Semiconductor, Inc.
|
| HY5DU28822LT-H |
16M X 8 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU561622DTP-5 |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| EDE2516AASE-AE-E EDE2516AASE-DF-E |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
ELPIDA MEMORY INC
|
