| PART |
Description |
Maker |
| KM29V64000TS |
8M X 8 BIT NAND FLSH MEMORY
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS43R16800A1-5TL |
8Meg x 16 128-MBIT DDR SDRAM
|
Integrated Silicon Solution, Inc.
|
| K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet
512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IS42S81600B-7T IS42S81600B-7TI IS42S81600B-7TL IS4 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S |
16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| IS42LS32400A IS42LS16800A-10B IS42LS16800A-10TI IS |
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| EM680FU16A EM680FU16A-45LF EM680FU16A-55LF EM680FU |
Low Power, 512Kx16 SRAM
|
Emerging Memory & Logic Solutions Inc
|
| HY29F800ABG-90 HY29F800ABG-70I HY29F800ABG-90I HY2 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
http://
|
| ACTSF512K16 ACT-SF512K16N-37F18T ACT-SF512K16N-37F |
ACT-SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module
|
AEROFLEX[Aeroflex Circuit Technology]
|
| N08T1630C1BT N08T1630CXB N08T1630C1BT2 N08T1630C1B |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| LH28F800BGHE |
IC,EEPROM,NOR FLASH,512KX16,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
|
sharp
|
| N08M163WL1AD-70I N08M163WL1A N08M163WL1AB N08M163W |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
