| PART |
Description |
Maker |
| UPD5101L UPD5101L-1 |
1024 Bit (256x4) Static CMOS RAM
|
NEC Electronics
|
| HM-6564202 HM4-65642B_883 HM1-65642_883 HM1-65642B |
RAM, Asynchronous CMOS, 8Kx8, Access Time 150ns, 75-250A
8K x 8 Asynchronous CMOS Static RAM
|
INTERSIL[Intersil Corporation]
|
| TC554001FTL-10V TC554001FTL-85V |
524, 288 words x 8 bit static RAM, access time 100ns
524, 288 words x 8 bit static RAM, access time 85ns
|
TOSHIBA
|
| MH25632BJ-10 |
Access time: 100 ns, 265K x 4 bit dynamic RAM
|
Mitsubishi Electric Corporation
|
| UPB100470D-15 UPB100470D-10 |
4,096 x 1-bit 100K ECL RAM. Access time(max) 15 ns.
4,096 x 1-bit 100K ECL RAM. Access time(max) 10 ns.
|
NEC
|
| WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
|
White Electronic Designs
|
| UT62257CLS-35L |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| UT62256CLS-35LE UT62256CLS-70LE UT62256CLS-70LLE U |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM
Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
| CDP68HC68T107 |
CMOS Serial Real-Time Clock With RAM and Power Sense/Control
|
Intersil Corporation
|
