| PART |
Description |
Maker |
| DM2240J2-10 DM2252J2-10 DM2242J2-10 DM2200J-10 DM2 |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
Yageo, Corp.
|
| DM2203TME-15 |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
BCD Semiconductor Manufacturing, Ltd.
|
| DM2223TME-20 |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
Fairchild Semiconductor, Corp.
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| PM9311-UC PM9312-UC PM9315-HC PM9313 PM9313-HC |
ENHANCED TT1SWITCH FABRIC SPECIALTY TELECOM CIRCUIT, CBGA624
ENHANCED TT1 SWITCH FABRIC
|
PMC-Sierra, Inc.
|
| CYM7232 CYM7264 7232SP |
DRAM Accelerator Module(DRAM加速器模块) DRAM CONTROLLER, XMA
From old datasheet system
|
Cypress Semiconductor, Corp.
|
| EL5203ISZ-T13 EL5203IYZ-T13 ELS5102 EL5102 EL5102I |
400MHz Slew Enhanced VFAs
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:35VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Body Diameter:10mm; Body Length:10.2mm RoHS Compliant: No
400MHz Slew Enhanced VFAs 1 CHANNEL, VIDEO AMPLIFIER, PDSO16
400MHz Slew Enhanced VFAs 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
400MHz Slew Enhanced VFAs 1 CHANNEL, VIDEO AMPLIFIER, PDSO5
|
INTERSIL[Intersil Corporation]
音频／视频放
Intersil, Corp.
|
| HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
| MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
Austin Semiconductor
http://
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
