| PART |
Description |
Maker |
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| TLE4945 TLE4945-2L TLE4945L TLE4905 TLE4905L TLE49 |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Hall Sensors - Unipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC switch (P-SSO-3-2 package)
Hall Sensors - Bipolar Hall IC latch (P-SSO-3-2 package)
Bipolar Hall IC Switches for Magnetic Field Applications(用于磁场应用的双极霍尔芯片开
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| ATS137 ATS137-P ATS137-PG-7-A ATS137-PG-7-B ATS137 |
SINGLE HALL EFFECT SWITCH MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, 700mV, RECTANGULAR, THROUGH HOLE MOUNT
SINGLE HALL EFFECT SWITCH 单个霍尔效应开
|
Diodes, Inc.
磁阻传感
Diodes Inc.
DIODES[Diodes Incorporated]
|
| LT140SA LT140 |
Hall Voltage 160mV Thin-Type Package GaAs Hall Device
|
Sharp Electrionic Component...
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| IQS6624-300DNR IQS6624-301DNR IQS624 IQS6624-500DN |
Hall effect angle sensor:On-chip Hall plates
|
List of Unclassifed Man...
|
| EM-1712 |
EM-1712 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC
|
Asahi Kasei Microsystems
|
| EM-1771 |
EM-1771 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC
|
Asahi Kasei Microsystems
|
| EM-1781 |
EM-1781 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC
|
Asahi Kasei Microsystems
|
| HAL115SF-C HAL114SF-C HAL11X HAL115SF-K HAL114SF-K |
Hall Effect Sensor Family 霍尔效应传感器系
Hall Effect Sensor Family MAGNETIC FIELD SENSOR-HALL EFFECT, -17-11mT, 0.13-0.28V, RECTANGULAR, SURFACE MOUNT
|
Micronas Semiconductor Holding AG
|
| A3150JLT A3150JUA 3150 A3150LT A3150UA A3150UA-LT |
IC SENSOR TOUCH/PROX 1CHAN 8DIP
CAP 0.01UF 1500V 10% X7R SMD-1825 TR-7 PLATED-NI/SN
320 x 240 pixel format, CFL backlight available with power harness
PROGRAMMABLE/ CHOPPERSTABILIZED/ HALL-EFFECT SWITCH
PROGRAMMABLE, CHOPPERSTABILIZED, HALL-EFFECT SWITCH
PROGRAMMABLE CHOPPERSTABILIZED HALL-EFFECT SWITCH
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| AH1803-SNG-7 AH1803-WG-7 AH1803 |
MICROPOWER ULTRA-SENSITIVE HALL-EFFECT SENSOR
MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4mT, 0.1-2.8V, RECTANGULAR, SURFACE MOUNT GREEN, SC-59, 3 PIN
MICROPOWER, ULTRA-SENSITIVE HALL EFFECT
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
