PART |
Description |
Maker |
1MBI600PX-140 |
IGBT MODULE 800 A, 1400 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7 800 A, 2000 V, SCR MODULE-7 800 A, 2200 V, SCR MODULE-7 150 A, 800 V, SCR 900 A, 800 V, SCR 900 A, 600 V, SCR 800 A, 800 V, SCR 120 A, 1600 V, SCR
|
Infineon Technologies AG
|
GP801DCM18 |
B Series/ Female Solder 800 A, 1800 V, N-CHANNEL IGBT Hi-Reliability Chopper Switch Low VCESAT IGBT Module
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
TT430N TT430N18KOF TT430N20KOF |
Netz-Thyristor-Modul Phase Control Thyristor Module 800 A, 1800 V, SCR MODULE-7 800 A, 2000 V, SCR MODULE-7
|
eupec GmbH Infineon Technologies AG
|
MP03HBT360-08 MP03HBT360-10 MP03HBT360-12 MP03HBT3 |
Dual Thyristor, Thyristor/Diode Module 553 A, 1000 V, SCR Dual Thyristor, Thyristor/Diode Module 553 A, 800 V, SCR Dual Thyristor, Thyristor/Diode Module 560 A, 1400 V, SCR
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd.
|
1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp. Microsemi Corporation
|
MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
CM100TF-28H |
122 x 32 pixel format, LED Backlight available Six-IGBT IGBTMOD 100 Amperes/1400 Volts
|
POWEREX[Powerex Power Semiconductors]
|
MDI550-12A4 MID550-12A4 |
1200V IGBT module IGBT Modules Short Circuit SOA Capability Square RBSOA IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
4MBI400VG-060R-50 |
IGBT MODULE (V series) 600V / 400A / IGBT, RB-IGBT 4 in one package
|
Fuji Electric
|
FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|