| PART |
Description |
Maker |
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| TA202412 TA202414 TA203012 TA203014 TA204012 TA204 |
Phase Control SCR (1200-1400 Amperes Avg 2400-4000 Volts) 第一阶段控制晶闸管（1200-1400安培平均2400-4000伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 1214-220M |
220 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| 1214-300 |
300 W, 50 V, 1200-1400 MHz common base transistor
BJT
|
GHz Technology
|
| 1214-370M |
370 Watts - 50 Volts, 330 ms, 10% Radar 1200 - 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| LH-FSLH-S130C-0406A FSLH-S130C |
2012 Size 1200/1400 MHz Chip Multilayer Splitter/Combiner
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| CM50TF-28H |
122 x 32 pixel format, LED Backlight available 50 A, 1400 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 50 Amperes/1400 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| IRKCL240-12S30 IRKCL240-12S10 IRKCL240-14S20NPBF I |
240 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1400 V, SILICON, RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| CM75TF-28H |
Six-IGBT IGBTMOD 75 Amperes/1400 Volts 75 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
